Defect formation in graphene during low-energy ion bombardment
نویسندگان
چکیده
منابع مشابه
Stress evolution in Si during low-energy ion bombardment
Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress...
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Solid argon is a model system for studies of radiative and nonradiative processes associated with electronic excitation by MeV light ion bombardment. The electronic excited states, excitons and excimers, have been extensively studied in this material and careful studies have also been made of the ejection (sputtering) of atoms from the surface. The sputtering requires transfer of energy from el...
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Surface x-ray diffraction measurements have been made to study defect formation at the atomic level in the near surface region of Si(111)737 surface during low energy ~200 eV! Ar ion bombardment. We have observed the two characteristics of the defects: missing atoms at different layers in the surface region as well as outward strain. We provide calculations that demonstrate how crystal truncati...
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ژورنال
عنوان ژورنال: APL Materials
سال: 2016
ISSN: 2166-532X
DOI: 10.1063/1.4945587